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FDD8796/FDU8796 N-Channel PowerTrench(R) MOSFET
March 2006
FDD8796/FDU8796 N-Channel PowerTrench(R) MOSFET
25V, 35A, 5.7m General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Features
Max rDS(on) = 5.7m at VGS = 10V, ID = 35A Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V Low gate resistance
Application
Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture
Avalanche rated and 100% tested RoHS Compliant
LE
A
REE I DF
D
M ENTATIO LE N MP
G D GDS I-PAK (TO-251AA) S Short Lead I-PAK G
S
MOSFET Maximum Ratings TC= 25C unless otherwise noted
Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package Limited) -Continuous (Die Limited) -Pulsed Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature (Note 1) (Note 2) Ratings 25 20 35 98 305 91 88 -55 to 175 mJ W C A Units V V
Thermal Characteristics
RJC RJA RJA Thermal Resistance, Junction to Case TO_252, TO_251 Thermal Resistance, Junction to Ambient TO_252, TO_251 Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 1.7 100 52 C/W C/W C/W
Package Marking and Ordering Information
Device Marking FDD8796 FDU8796 FDU8796 Device FDD8796 FDU8796 FDU8796_F071 Package TO-252AA TO-251AA TO-251AA
1
Reel Size 13'' N/A (Tube) N/A (Tube)
Tape Width 12mm N/A N/A
Quantity 2500 units 75 units 75 units
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(c)2006 Fairchild Semiconductor Corporation FDD8796/FDU8796 Rev. B
FDD8796/FDU8796 N-Channel PowerTrench(R) MOSFET
Electrical Characteristics TJ = 25C unless otherwise noted
Symbol Parameter Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current Test Conditions ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 20V VGS = 0V VGS = 20V VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 35A rDS(on) Drain to Source On Resistance VGS = 4.5V, ID = 35A VDS = 10V, ID = 35A TJ = 175C 1.2 1.8 -6.7 4.5 6.0 6.9 5.7 8.0 9.5 m TJ = 150C Min 25 7 1 250 100 Typ Max Units V mV/C A nA
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ
On Characteristics
Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient 2.5 V mV/C
Dynamic Characteristics
Ciss Coss Crss RG td(on) tr td(off) tf Qg Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 13V, VGS = 0V, f = 1MHz f = 1MHz 1960 455 315 1.1 2610 605 475 pF pF pF
Switching Characteristics
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain Charge VGS = 0 to10V VGS = 0 to 5V VDD =13V, ID = 35A, Ig = 1.0mA VDD =13V, ID = 35A VGS = 10V, RGS = 20 10 24 99 57 37 19 6 6 20 39 158 91 52 27 ns ns ns ns nC nC nC nC
Drain-Source Diode Characteristics
VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 35A VGS = 0V, IS = 15A IF = 35A, di/dt = 100A/s IF = 35A, di/dt = 100A/s 0.9 0.8 30 23 1.25 1.0 45 35 V V ns nC
Notes: 1: Pulse time < 300s, Duty cycle = 2%. 2: Starting TJ = 25C, L = 0.3mH, IAS = 24.7A, VDD = 23V, VGS = 10V.
FDD8796/FDU8796 Rev. B
2
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FDD8796/FDU8796 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
70 60
ID, DRAIN CURRENT (A)
VGS = 10V
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10
VGS = 4.5V VGS = 3.5V VGS = 3V
50 40 30 20 10 0 0
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
VGS = 4.5V VGS = 3.5V
VGS = 3V
VGS = 10V
1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V)
4
20 30 40 50 ID, DRAIN CURRENT(A)
60
70
Figure 1. On Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
14
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80
VGS = 10V
rDS(on), ON-RESISTANCE (m)
ID = 35A
ID =35A
12 10 8 6 4 2
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
TJ = 175oC
TJ = 25oC
-40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)
200
2
4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. Normalized On Resistance vs Junction Temperature
70
Figure 4. On-Resistance vs Gate to Source Voltage
100
ID, DRAIN CURRENT (A)
60 50 40 30 20 10 0 0
PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX
TJ = 175oC
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
10
TJ = 175oC
1 0.1 0.01 1E-3 0.0
TJ = -55oC
TJ = 25oC TJ = -55oC
TJ = 25oC
2 3 4 VGS, GATE TO SOURCE VOLTAGE (V)
1
0.3
0.6
0.9
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
FDD8796/FDU8796 Rev. B
3
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FDD8796/FDU8796 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE(V)
10 8 6 4 2 0
VDD = 10V VDD = 13V VDD = 16V
4000
Ciss
CAPACITANCE (pF)
1000
Coss
Crss
f = 1MHz VGS = 0V
0
10
20 30 Qg, GATE CHARGE(nC)
40
100 0.1
1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
50
IAS, AVALANCHE CURRENT(A)
Figure 8. Capacitance vs Drain to Source Voltage
100
ID, DRAIN CURRENT (A)
TJ = 25oC
80
VGS = 10V
10
TJ = 125oC
60 40 20 0 25
VGS = 4.5V
TJ = 150oC
RJC = 1.7 C/W
o
1 0.01
0.1
1
10
100 300
tAV, TIME IN AVALANCHE(ms)
50 75 100 125 150 TC, CASE TEMPERATURE(oC)
175
Figure 9. Unclamped Inductive Switching Capability
1000
Figure 10. Maximum Continuous Drain Current vs Case Temperature
10000
P(PK), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
10us
VGS = 10V
TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC ---------------------150
100
100us
10
LIMITED BY PACKAGE
1000
I = I25
1ms
SINGLE PULSE TJ = MAX RATED
TC = 25oC
1
OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on)
10ms DC
100
50 -5 10
SINGLE PULSE
0.1
1
10 VDS, DRAIN TO SOURCE VOLTAGE (V)
40
10
-4
10 10 10 t, PULSE WIDTH (s)
-3
-2
-1
10
0
10
1
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power Dissipation
FDD8796/FDU8796 Rev. B
4
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FDD8796/FDU8796 N-Channel PowerTrench(R) MOSFET
Typical Characteristics TJ = 25C unless otherwise noted
2 1 NORMALIZED THERMAL IMPEDANCE, ZJC
DUTY CYCLE-DESENDING ORDER
0.1
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.01
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC
SINGLE PULSE
1E-3 -5 10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION(s)
Figure 13. Transient Thermal Response Curve
FDD8796/FDU8796 Rev. B
5
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
FDD8796/FDU8796 N-Channel PowerTrench(R) MOSFET
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I18
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
FDD8796/FDU8796 Rev. B
6
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